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                                FFA60UP30DN PDF Datasheet瀏覽和下載

                                型號.:
                                FFA60UP30DN
                                PDF下載:
                                下載PDF文件
                                內容描述:
                                [60Amperes,300Volts Dual Common Cathode Ultra Fast Recovery Rectifiers]
                                文件大小:
                                5115 K
                                文件頁數:
                                2 Pages
                                品牌Logo:
                                品牌名稱:
                                THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
                                供應:
                                FFA60UP30DN貨源
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                                • IC型號
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                                • 批號
                                • 數量
                                • 封裝
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                                • 操作
                                 瀏覽型號FFA60UP30DN的Datasheet PDF文件第2頁 
                                FFA60UP30DN
                                Pb
                                Pb Free Plating Product
                                FFA60UP30DN
                                TO-3PB(TO-3PN)
                                Cathode(Bottom Side Metal Heatsink)
                                60Amperes,300Volts Dual Common Cathode Ultra Fast Recovery Rectifiers
                                APPLICATION
                                ·
                                ·
                                ·
                                ·
                                ·
                                ·
                                ·
                                Freewheeling, Snubber, Clamp
                                Inversion Welder
                                PFC
                                Plating Power Supply
                                Ultrasonic Cleaner and Welder
                                Converter & Chopper
                                UPS
                                PRODUCT FEATURE
                                ·
                                Ultrafast Recovery Time
                                ·
                                Soft Recovery Characteristics
                                ·
                                Low Recovery Loss
                                ·
                                Low Forward Voltage
                                ·
                                High Surge Current Capability
                                ·
                                Low Leakage Current
                                Internal Configuration
                                Base Backside
                                Anode
                                Anode
                                Cathode
                                GENERAL DESCRIPTION
                                FFA60UP30DN using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.
                                Absolute Maximum Ratings
                                Parameter
                                Repetitive peak reverse voltage
                                Continuous forward current
                                Single pulse forward current
                                Maximum repetitive forward current
                                Operating junction
                                Storage temperatures
                                Symbol
                                V
                                RRM
                                I
                                F(AV)
                                I
                                FSM
                                I
                                FRM
                                Tj
                                Tstg
                                Test Conditions
                                Tc =110°C
                                Tc =25°C
                                Square wave, 20kHZ
                                Values
                                300
                                60
                                600
                                150
                                175
                                -55 to +175
                                °C
                                °C
                                A
                                Units
                                V
                                Electrical characteristics (Ta=25°C unless otherwise specified)
                                Parameter
                                Breakdown voltage
                                Blocking voltage
                                Forward voltage
                                (Per Diode)
                                Reverse leakage
                                current(Per Diode)
                                Reverse recovery
                                time(Per Diode)
                                Symbol
                                V
                                BR
                                ,
                                V
                                R
                                V
                                F
                                Test Conditions
                                I
                                R
                                =100μA
                                I
                                F
                                =30A
                                I
                                F
                                =30A, Tj =125°C
                                V
                                R
                                = V
                                RRM
                                I
                                R
                                Tj=150°C, V
                                R
                                =300V
                                I
                                F
                                =0.5A, I
                                R
                                =1A, I
                                RR
                                =0.25A
                                I
                                F
                                =1A,V
                                R
                                =30V, di/dt =200A/us
                                35
                                26
                                Min
                                300
                                0.96
                                0.85
                                1.20
                                1.00
                                10
                                100
                                45
                                40
                                μA
                                V
                                Typ.
                                Max.
                                Units
                                t
                                rr
                                ns
                                Thermal characteristics
                                Junction-to-Case
                                Paramter
                                Symbol
                                R
                                θJC
                                Typ
                                0.8
                                ℃/W
                                Units
                                Rev.08T
                                ? 1995 Thinki Semiconductor Co., Ltd.
                                Page 1/2
                                http://www.thinkisemi.com.tw/
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